Feedback control of plasma etching reactors for improved etching uniformity
نویسندگان
چکیده
منابع مشابه
Modeling and simulation of plasma etching reactors for microelectronics
As microelectronic devices continue to shrink and process requirements become ever more stringent, plasma modeling and simulation becomes increasingly more attractive as a tool for design, control, and optimization of plasma reactors. A brief introduction and overview of the plasma reactor modeling and simulation problem is presented in this paper. The problem is broken down into smaller pieces...
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Angle-resolved x-ray photoelectron spectroscopy ( X P S ) and laserinduced thermal desorption (LD), combined with laser-induced fluorescence (LIF) detection, were used to study the etching of olycrystalline Si (poly-Si) and single crystal Si(lO0) in high density (1-2 x 10fl ions/cm3), low presswe (0.510 mTorr) C12MBr-containing, helical resonator plasmas. The XPS measurements on both unmasked S...
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Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2...
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Wafer-to-wafer process reproducibility during plasma etching often depends on the conditioning of the inside surfaces of the reactor. Passivation of reactor surfaces by plasma generated species, often called seasoning, can change the reactive sticking coefficients of radicals, thereby changing the composition of the radical and ion fluxes to the wafer. Ion bombardment of the walls may influence...
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ژورنال
عنوان ژورنال: Chemical Engineering Science
سال: 2001
ISSN: 0009-2509
DOI: 10.1016/s0009-2509(00)00372-9